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引用本文:   石小雪, 李秀琪, 魏小平, 李建平. AgBiS2/Bi2S3分子印迹光电化学传感器用于测定残杀威. 分析化学, 2020, 48(3): 396-404. doi:  10.19756/j.issn.0253-3820.191608 [复制]

Citation:   SHI Xiao-Xue , LI Xiu-Qi , WEI Xiao-Ping , LI Jian-Ping . Molecularly Imprinted Photoelectrochemical Sensor Based on AgBiS2/Bi2S3 for Determination of Propoxur. Chinese Journal of Analytical Chemistry, 2020, 48(3): 396-404. doi: 10.19756/j.issn.0253-3820.191608 [复制]

AgBiS2/Bi2S3分子印迹光电化学传感器用于测定残杀威

收稿日期: 2019-10-16

基金项目: 本文系国家自然科学基金项目(No.21765006)、广西自然科学基金项目(Nos.2015GXNSFFA139005,2018GXNSFAA138145)和广西岩溶地区水污染控制与用水安全保障协同创新中心项目资助

Molecularly Imprinted Photoelectrochemical Sensor Based on AgBiS2/Bi2S3 for Determination of Propoxur

Received Date:  2019-10-16

Fund Project:  This work was supported by the National Natural Science Foundation of China (No. 21765006) and the Guangxi Natural Science Foundation, China (Nos. 015GXNSFFA139005, 2018GXNSFAA138145).

构建了一种基于AgBiS2/Bi2S3的分子印迹光电化学传感器,用于杀虫剂残杀威的检测。采用溶剂热法,在钛片基底上合成AgBiS2/Bi2S3复合材料。以残杀威为模板分子,邻苯二胺为功能单体,通过电聚合在修饰AgBiS2/Bi2S3复合材料的钛片上电沉积形成分子印迹聚合物膜,可对残杀威产生特异性识别。残杀威与印迹孔穴特异性结合后,阻碍电子供体穿过孔穴到达电极表面,导致光电流降低,据此进行残杀威的检测。残杀威浓度的对数值与光电流在1.0×10-12~5.0×10-10 mol/L范围内呈线性关系,检出限为2.3×10-13 mol/L。将此传感器用于水果等实际样品中残杀威残留的检测,加标回收率介于101.0%~103.1%之间。

关键词:   分子印迹, 光电化学传感器, 残杀威, AgBiS2/Bi2S3复合材料, 农药残留
Key words:   Molecularly imprinted sensor, Photoelectrochemical sensor, Propoxur, AgBiS2/Bi2S3 composites, Pesticide residue
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AgBiS2/Bi2S3分子印迹光电化学传感器用于测定残杀威

石小雪, 李秀琪, 魏小平, 李建平

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